Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits
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چکیده
منابع مشابه
Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits
Abstract. A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and st...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2006
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/38/1/026